ro ducts., 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212) 227-6005 fax: (973) 376-8960 BLX65E BLX65Es v.h.f./u.h.f. power transistors n-p-n silicon planar epitaxial transistors in to-39 envelope designed for use in portable and mobile radio transmitters in the v.h.f. and u.h.f. bands. quick reference data r.f. performance at tc = 25 c in a common-emitter class-b circuit. mode of operation c.w.; narrow band vce v 12,5 12,5 f mhz 175 470 pl w 2 2 gp db typ. 16 > 9 vc % typ. 68 > 55 mechanical data fig. 1 to-39/3. emitter connected to case. dimensions in mm 8,5 max [max .12,7. mln *max. 4,9forBLX65Es. nj semi-conductors reserves the right to change test conditions, parameters limits and package dimensions without notice information famished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however nj semi-conductors assumes no responsibility for any errors or omissions discovtfred in its use. ni semi-condiictors ?ncourages customers to verify rhat datasheets are current before plncing orders.
ratings limiting values in accordance with the absolute maximum system (iec 134). collector-base voltage (open emitter) peak value- vcbom collector emitter voltage (open base) vceo emitter-base voltage (open collector) vebq collector current d.c. or average iq (peak value); f > 1 mhz icivi total power dissipation at tmb < 90 c; f > 1 mhz storage temperature characteristics tj = 25 c unless otherwise specified collector-base breakdown voltage open emitter; iq = 10 ma collector-emitter breakdown voltage open base; iq = 25 ma emitter-base breakdown voltage open collector; + i g = 1,0 ma collector-emitter saturation voltage ic = 100ma; ib = 20 ma d.c, current gain ic= 100m/ transition frequency at f = 500 mhz -ie =200 ma;vcb = 5v collector capacitance at f - 1 mhz le = ie = 0;vcb=10v ktot rstg v(br)cbo) v(br)ceo v(br)ebo vcesat "fe t cc > > > typ. typ. typ. typ. max. 36 v max. 16 v max. 4 v max. 0,7 a max. 2,0 a max. 3,0 w -65to+ 175 c 36 v 16 v 4 v 0,1 v 10 40 1.4 ghz 6.5 pf application information r.f. performance in c.w. operation (common-emitter circuit; class b);tc = 25 c vce v 9,6 12,5 12,5 12,5 f mhz 175 175 470 470 pl w 2,0 2,0 2,0 2,0 3 (w) 2 1 db typ. 13 typ. 16 > 9 typ. 10,6 - / f- . / , / s* % fi ii typ. 68 typ. 68 > 55 typ. 68 7z80310 ^ 3 + j8 12-j17 0 100 200 300 400 soo ps (mw) fig. 2 load power vs. source power; vq = 12,5 v; f = 470 mhz; tm(j = 25 c; class-b operation; typical values. ruggedness the device is capable of withstanding a full load mismatch (vswr = 50; all phases) at rated load power up to a supply voltage of 15,0 v, ps + 20%, f = 470 mhz and tmb = 25 c.
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